Excessive use of detergents in wide industrial processes results in unwanted surfactant pollution. Among them, sodium dodecyl sulphate (SDS) has well-known history to be used in pharmaceutical and industrial applications. However, if discharged without treatment, it can cause toxic effects on living organisms especially to the aquatic life. Floating treatment wetlands (FTWs) could be a cost-effective and eco-friendly options for the treatment of wastewater containing SDS. In this study, FTWs mesocosms were established in the presence of hydrocarbons-degrading bacteria. Two plant species (Brachiaria mutica and Leptochloa fusca) were vegetated and a consortium of bacteria (Acinetobacter sp. strain BRSI56, Acinetobacter junii strain TYRH47, and Acinetobacter sp. strain CYRH21) was applied to enhance degradation in a short-time. Results illustrated that FTWs vegetated with both plants successfully removed SDS from water, however, bacterial augmentation further enhanced the removal efficiency. Maximum reduction in SDS concentration (97.5%), chemical oxygen demand (92.0%), biological oxygen demand (94.2%), and turbidity (99.4%) was observed in the water having FTWs vegetated with B. mutica and inoculated with the bacteria. The inoculated bacteria showed more survival in the roots and shoots of B. mutica as compared to L. fusca. This study concludes that FTWs have the potential for the removal of SDS from contaminated water and their remediation efficiency can be enhanced by bacterial augmentation.
We report the growth of SiC layers on low cost p-type silicon (100 and/or 111) substrates maintained at constant temperature (1050 - 1350oC, ∆T=50oC) in a low pressure chemical vapor deposition reactor. Typical Fourier transform infrared spectrum showed a dominant peak at 800 cm-1 due to Si-C bond excitation. Large area x-ray diffraction spectra revealed single crystalline cubic structures of 3C-SiC(111) and 3C-SiC(200) on Si(111) and Si(100) substrates, respectively. Cross-sectional views exposed by scanning electron microscopy display upto 104 µm thick SiC layer. Energy dispersive spectroscopy of the layers demonstrated stiochiometric growth of SiC. Surface roughness and morphology of the films were also checked with the help of atomic force microscopy. Resistivity of the as-grown layers increases with increasing substrate temperature due to decrease of isolated intrinsic defects such as silicon and/or carbon vacanies having activation energy 0.59 ±0.02 eV.
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