InAs/GaP semiconductor quantum dots (QDs) were spontaneously formed using direct island growth (Volmer–Weber) rather than Stranski–Krastanow (S-K) growth. Structural investigations of InAs/GaP QDs suggest kinetically limited growth and show a broad size distribution. Photoluminescence and cathodoluminescence spectroscopy reveal large inhomogeneous broadening with the emission peak centering at 1.7 eV. Device applications exploiting broad optical emission in QDs are discussed.
Distribution of defects induced in fused silica by ultraviolet laser pulses before and after treatment with a CO 2 laser J. Appl. Phys. 97, 113519 (2005); 10.1063/1.1922591 Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire Appl. Phys. Lett. 83, 33 (2003); 10.1063/1.1588370Crystal size and oxygen segregation for polycrystalline GaN Irradiation induced charging of wide band gap materials may significantly influence the development of radiation damage and associated defect migration. Charge trapped at irradiation induced and/or pre-existing defects induces a localized electric field within the irradiated volume of specimen. The powerful combination of cathodoluminescence microanalysis and electric force microscopy allows direct monitoring of the development of the irradiation induced charge distribution and its effect on the microscopic spatial segregation of defects. These techniques have been used to demonstrate the important influence of the induced local field on the microscopic defect structure of quartz.
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