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X-ray Photoelectron Spectroscopy (XPS) has been used to investigate the oxidation of (011) Ge substrates. The sample surfaces were CP4-etched, then annealed in situ, at different temperatures, for various durations. Dry and wet atmospheres were used. The oxidation rate during the early stage was increased by the presence of moisture in the atmosphere. A simple model was used to define and determine an apparent thickness of the oxide film from XPS measurements. The time dependence of the apparent thickness is consistent with a partial coverage of the surface by oxide islands. The growth kinetics of the oxide islands obeys a nearly cubic law.

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