A natural single crystal of ilmenite (FeTiO,) was irradiated at 100 K with 200 keV Ar2+.Rutherford backscattering spectroscopy and ion channeling with 2 MeV He' ions were used to monitor damage accumulation in the surface region of the implanted crystal. At an irradiation fluence of l~l O '~ A? cm-2, considerable near-surface He' ion dechanneling was observed, to the extent that ion yield from a portion of the aligned crystal spectrum reached the yield level of a random spectrum. This observation suggests that the near-surface region of the crystal was amorphized by the implantation. Cross-sectional transmission electron microscopy and electron diffraction on this sample confirmed the presence of a 150 nm thick amorphous layer. These results are compared to similar investigations on geikielite (MgTiO,) and spinel (MgAl,O,) to explore factors that may influence radiation damage response in oxides.
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