ance of a MESFET when its gate is forward biased with re-viding the microwave MESFET sample and the measurement spect to the source and an open-circuit is maintained at the facility. drain. We have also demonstrated that by measuring these resistances at different currents and by using the theoretical curves, channel resistance, series source, and drain resistances of MESFET's can be readily determined, tron Device Lett., vol. EDL-5, pp. 5-7, 1984.
The quantum well (QW) solar cell is considered in the radiative limit. A (type I) QW is treated as an incremental cell added to a baseline cell made of the barrier material. By considering the QW to be isolated, in that carrier flow into and out of the QW is prevented, the open circuit voltage of the incremental cell is determined as a function of well width. This method indicates that a QW reduces the voltage of the baseline cell but the efficiency may still increase, particularly if the baseline cell's band gap is greater than or equal to its optimum value for the illuminating spectrum. capture thermal -----photon
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