A novel 1500 • C gate oxidation process has been demonstrated on Si face of 4H-SiC. Lateral channel metal-oxide-semiconductor-field-effect-transistors (MOSFETs) fabricated using this process have a maximum field effect mobility of approximately 40 cm 2 V −1 s −1 without post oxidation passivation. This is substantially higher than other reports of MOSFETs with thermally grown oxides (typically grown at the standard silicon temperature range of 1100-1200 • C). This result shows the potential of a high temperature oxidation step for reducing the channel resistance (thus the overall conduction loss), in power 4H-SiC MOSFETs.

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NiGeAu and PdGeTiPt ohmic contacts to n-GaAs and TiPd and PdGeTiPt ohmic contacts to p+-GaAs are examined by comparing their contact resistances, chemical intermixing as determined by Auger electron microscopy, interface structure as determined by transmission electron microscopy, and surface roughness as determined by surface profiling all measured as a function of annealing time and temperature. The n-PdGeTiPt contact annealed for short times, ⩽15 s, and at low temperatures, ⩽395 °C, was superior to the NiGeAu contact because it had a comparable contact resistance, less interface mixing, better lateral homogeneity, and a smoother surface. However, its contact resistance increased substantially with the annealing time and temperature, whereas the NiGeAu contact was relatively unaffected. For all annealing times and temperatures except the one at 550 °C, the TiPd contact to p+ GaAs was superior as it had a lower contact resistance and a comparable amount of interface intermixing, lateral homogeneity, and surface roughness. However, it had a complete chemical breakdown at 550 °C, whereas the PdGeTiPt contact resistance remained relatively stable.