New atomic emission spectrometry (AES) techniques for the analysis of pure gallium involving spectral excitation in the region before the junction of the jets of a two-jet arc plasmatron have been developed. The technique of direct AES analysis enables the simultaneous measurement of 34 impurities with detection limits of n 6 10 24 -n 6 10 26 %. The technique with preconcentration of impurities involves distilling off the sample base in the form of GaCl 3 ?NH 3 and enables the determination of at least 23 impurities in gallium with detection limits of n 6 10 25 -n 6 10 27 %.
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