Metal nanowires are promising next-generation transparent conductive electrodes for application in optoelectronic devices in the field of printed electronics. Because metal nanowire networks have high contact resistance, welding at the junction between nanowires via heat treatment must be performed to improve the conductivity of the network. However, in the annealing step of metal nanowire production, problems such as thermal breakdown due to Rayleigh instability frequently occur. In addition, the conductivity of metal nanowires can be improved via the use of conductive nanomaterials. However, many coating materials can also reduce the transmittance. In this study, we describe a method for locally reducing Ag ions at the surfaces or junctions of Ag nanowires through Joule heating without optical loss. Herein, an organometallic precursor solution containing Ag ions functionalized with amino groups (−NH 2 ) is selectively adhered onto the metal. The attached Ag ions were reduced without any reducing agent, and the electrode conductivity was enhanced via lowering of contact resistance between the Ag nanowires without optical loss. The localized reduced (LR) AgNW electrode exhibited a sheet resistance of 14.4 Ω/sq and a transmittance of 93.04%, which are improved compared to those reported in previous studies. The LR-AgNW could be easily transferred to a flexible plastic film substrate, which was successfully embedded and applied to a light-emitting device that exhibited steady light-emitting performance even when bent. The flexible LR-AgNW film is expected to be useful in various optoelectronic devices such as solar cells, organic light-emitting diodes, touch screens, and wearable devices.
The solution-processed QLED (quantum dot lightemitting diode) has a great potential for low-cost and largescale displays. However, the solution-processed QLED has a limitation in the current efficiency due to the rough surface of the quantum dot layer causing shunt leakage. This paper reports solution-processed highly current-efficient QLED utilizing zinc oxide nanoparticles (ZnO NPs) and an organic ionic interlayer as an electron injection layer. The organic ionic materials create the permanent interface dipole by shifting the vacuum energy using tetrabutylammonium (TBA) cations and tetrafluoroborate (BF 4 ) anions under the applied electric field. The dipole effectively reduces the electronic injection barrier to provide charge carrier balance of the holes and electrons in the emissive layer. As a result, the maximum current efficiency and power efficiency for the device structure of QLEDs ITO/PEDOT : PSS/PVK/CdSe@ZnS QDs/ZnO NPs/TBABF 4 + PEG/Al (23.9 cd A À 1 and 12.9 lm W À 1 ) enhanced significantly compared to the structure of QLEDs ITO/PEDOT : PSS/PVK/CdSe@ZnS QDs/ZnO NPs/PEI/Al (9.7 cd A À 1 and 5.8 lm W À 1 ) and the structure of QLEDs ITO/ PEDOT : PSS/PVK/CdSe@ZnS QDs/ZnO NPs/Al (6.8 cd A À 1 and 4.1 lm W À 1 ). The improvement of the current efficiency can be analyzed under the Space Charge-Limited Current regime. In addition, this paper examines the existence of parasitic resistances including series resistance and shunt resistance by modeling the QLED device as a single exponential diode model. Finally, we can evaluate the influence of the ionic interlayer on the entire QLED device in reducing the leakage current and the current-voltage (I-V) characteristic of the fabricated QLED devices. We believe the presented highperformance quantum dot light-emitting diodes have a high potential and impact on lighting and display technologies.
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