Many of the best-performing perovskite photovoltaic devices make use of 2D/3D interfaces, which improve efficiency and stability – but it remains unclear how the conversion of 3D-to-2D perovskite occurs and how these interfaces are assembled. Here, we use in situ Grazing-Incidence Wide-Angle X-Ray Scattering to resolve 2D/3D interface formation during spin-coating. We observe progressive dimensional reduction from 3D to n = 3 → 2 → 1 when we expose (MAPbBr3)0.05(FAPbI3)0.95 perovskites to vinylbenzylammonium ligand cations. Density functional theory simulations suggest ligands incorporate sequentially into the 3D lattice, driven by phenyl ring stacking, progressively bisecting the 3D perovskite into lower-dimensional fragments to form stable interfaces. Slowing the 2D/3D transformation with higher concentrations of antisolvent yields thinner 2D layers formed conformally onto 3D grains, improving carrier extraction and device efficiency (20% 3D-only, 22% 2D/3D). Controlling this progressive dimensional reduction has potential to further improve the performance of 2D/3D perovskite photovoltaics.
Perovskite solar cells (PSCs) consisting of interfacial two- and three-dimensional heterostructures that incorporate ammonium ligand intercalation have enabled rapid progress toward the goal of uniting performance with stability. However, as the field continues to seek ever-higher durability, additional tools that avoid progressive ligand intercalation are needed to minimize degradation at high temperatures. We used ammonium ligands that are nonreactive with the bulk of perovskites and investigated a library that varies ligand molecular structure systematically. We found that fluorinated aniliniums offer interfacial passivation and simultaneously minimize reactivity with perovskites. Using this approach, we report a certified quasi–steady-state power-conversion efficiency of 24.09% for inverted-structure PSCs. In an encapsulated device operating at 85°C and 50% relative humidity, we document a 1560-hour
T
85
at maximum power point under 1-sun illumination.
III‐V colloidal quantum dots (CQDs) are promising materials for optoelectronic applications, for they avoid heavy metals while achieving absorption spanning the visible to the infrared (IR). However, the covalent nature of III‐V CQDs requires the development of new passivation strategies to fabricate conductive CQD solids for optoelectronics: this work shows herein that ligand exchanges, previously developed in II‐VI and IV‐VI quantum dots and employing a single ligand, do not fully passivate CQDs, and that this curtails device efficiency. Guided by density functional theory (DFT) simulations, this work develops a co‐passivation strategy to fabricate indium arsenide CQD photodetectors, an approach that employs the combination of X‐type methyl ammonium acetate (MaAc) and Z‐type ligands InBr3. This approach maintains charge carrier mobility and improves passivation, seen in a 25% decrease in Stokes shift, a fourfold reduction in the rate of first‐exciton absorption linewidth broadening over time‐under‐stress, and leads to a doubling in photoluminescence (PL) lifetime. The resulting devices show 37% external quantum efficiency (EQE) at 950 nm, the highest value reported for InAs CQD photodetectors.
Piezoelectric materials convert between mechanical and electrical energy and are a basis for self-powered electronics. Current piezoelectrics exhibit either large charge (d33) or voltage (g33) coefficients but not both simultaneously, and yet the maximum energy density for energy harvesting is determined by the transduction coefficient: d33*g33. In prior piezoelectrics, an increase in polarization usually accompanies a dramatic rise in the dielectric constant, resulting in trade off between d33 and g33. This recognition led us to a design concept: increase polarization through Jahn-Teller lattice distortion and reduce the dielectric constant using a highly confined 0D molecular architecture. With this in mind, we sought to insert a quasi-spherical cation into a Jahn-Teller distorted lattice, increasing the mechanical response for a large piezoelectric coefficient. We implemented this concept by developing EDABCO-CuCl4 (EDABCO = N-ethyl-1,4-diazoniabicyclo[2.2.2]octonium), a molecular piezoelectric with a d33 of 165 pm/V and g33 of ~2110 × 10−3 V m N−1, one that achieved thusly a combined transduction coefficient of 348 × 10−12 m3 J−1. This enables piezoelectric energy harvesting in EDABCO-CuCl4@PVDF (polyvinylidene fluoride) composite film with a peak power density of 43 µW/cm2 (at 50 kPa), the highest value reported for mechanical energy harvesters based on heavy-metal-free molecular piezoelectric.
Band gap tuning in mixed-halide perovskites enables efficient
multijunction
solar cells and LEDs. However, these wide band gap perovskites, which
contain a mixture of iodide and bromide ions, are known to phase segregate
under illumination, introducing voltage losses that limit stability.
Previous studies have employed inorganic perovskites, halide alloys,
and grain/interface passivation to minimize halide segregation, yet
photostability can be further advanced. By focusing on the role of
halide vacancies in anion migration, one expects to be able to erect
local barriers to ion migration. To achieve this, we employ a 3D “hollow”
perovskite structure, wherein a molecule that is otherwise too large
for the perovskite lattice is incorporated. The amount of hollowing
agent, ethane-1,2-diammonium dihydroiodide (EDA), varies the density
of the hollow sites. Photoluminescence measurements reveal that 1%
EDA in the perovskite bulk can stabilize a 40% bromine mixed-halide
perovskite at 1 sun illumination intensity. These, along with capacitance–frequency
measurements, suggest that hollow sites limit the mobility of the
halide vacancies.
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