The first phase of the Brazilian Graviton Project is the construction and operation of the gravitational wave detector Mario Schenberg at the Physics Institute of the University of São Paulo. This gravitational wave spherical antenna is planned to feature a sensitivity better than h = 10−21 Hz−1/2 at the 3.0–3.4 kHz bandwidth, and to work not only as a detector, but also as a testbed for the development of new technologies. Here we present the status of this detector.
We are building the Schenberg gravitational wave detector at the Physics Institute of the University of São Paulo as programmed by the Brazilian Graviton Project. The antenna and its vibration isolation system are already built, and we have made a first cryogenic run for an overall test, in which we measured the antenna mechanical Q (figure of merit). We also have built a 10.21 GHz oscillator with phase noise performance better than −120 dBc at 3.2 kHz to pump an initial CuAl6% two-mode transducer. We plan to prepare this spherical antenna for a first operational run at 4.2 K with a single transducer and an initial target sensitivity of h ∼ 2 × 10−21 Hz−1/2 in a 50 Hz bandwidth around 3.2 kHz soon. Here we present details of this plan and some recent results of the development of this project.
Abstract-MOSFET can operate as a radiation detector mainly in high-energy photon beams, which are normally used in cancer treatments. In general, such an electronic device can work as a dosimeter from threshold voltage shift measurements. The purpose of this article is to show a new way for measuring the dose-response of MOSFETs when they are under X-ray beams generated from 100kV potential range, which is normally used in diagnostic radiology. Basically, the method consists of measuring the MOSFET drain current as a function of the radiation dose. For this the type of device, it has to be biased with a high value resistor aiming to see a substantial change in the drain current after it has been irradiated with an amount of radiation dose. Two types of N channel device were used in the experiment: a signal transistor and a power transistor. The delivered dose to the device was varied and the electrical curves were plotted. Also, a sensitivity analysis of the power MOSFET response was made, by varying the tube potential of about 20%. The results show that both types of devices have responses very similar, the shift in the electrical curve is proportional to the radiation dose. Unlike the power MOSFET, the signal transistor does not provide a linear function between the dose rate and its drain current. We also have observed that the variation in the tube potential of the X-ray equipment produces a very similar dose-response.
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