Motivated by the possibility of a strain tuning effect on electronic properties of graphene, the semimetalÀMott insulator transition process on the uniaxial honeycomb lattice is numerically studied using the determinant quantum Monte Carlo method. As the simulations are based on the half-filled-repulsive Hubbard model, the system is sign-problem free. Herein, the temperature-dependent DC conductivity to characterize electronic transport properties is used. The data suggest that metal is suppressed in the presence of strain. More interestingly, within the finite-size-scaling study, a novel antiferromagnetic phase arises at around U∼U c . Therefore, a phase diagram generated by the competition between interactions, and strain is established, which may help to expand the application of strain effect on graphene.
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