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The Boundary Element Method (BEM) is a discretisation technique for solving partial differential equations, which offers, for certain problems, important advantages over domain techniques. Despite the high CPU time reduction that can be achieved, some 3D problems remain today unbeatable because the extremely large number of degrees of freedom-dof-involved in the boundary description. Model reduction seems to be an appealing choice for both, accurate and efficient numerical simulations. However, in the BEM the reduction in the number of degrees of freedom does not imply a significant reduction in the CPU time, because in this technique the more important part of the computing time is spent in the construction of the discrete system of equations. In this way, a reduction also in the number of weighting functions, seems to be a key point to render efficient boundary element simulations.

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The paper resumes the results obtained applying various implementations of the direct boundary element method (BEM) to the solution of the Laplace Equation governing the potential flow problem during everyday service manoeuvres of high-speed trains. In particular the results of train passing events at three different speed combinations are presented. Some recommendations are given in order to reduce calculation times which as is demonstrated can be cut down to not exceed reasonable limits even when using nowadays office PCs. Thus the method is shown to be a very valuable tool for the design engineer.

Quasi-monocrystalline silicon wafers have appeared as a critical innovation in the PV industry, joining the most favorable characteristics of the conventional substrates: the higher solar cell efficiencies of monocrystalline Czochralski-Si (Cz-Si) wafers and the lower cost and the full square-shape of the multicrystalline ones. However, the quasi-monocrystalline ingot growth can lead to a different defect structure than the typical Cz-Si process. Thus, the properties of the brand new quasimonocrystalline wafers, based on low and high crystal defect densities, have been for the first time studied from a mechanical point of view, comparing their strength with that of both Cz-Si monocrystalline and typical multicrystalline materials. The study has been carried out employing the four line bending test and simulating them by means of FE models. For the analysis, failure stresses were fitted to a three-parameter Weibull distribution. High mechanical strength was found in all the cases. However, the quasi-monocrystalline wafers characterized by large density of bulk defects, due to the noticeable density of extended defects, showed lower fracture tensions.