Aiming to overcome both the structural and commercial limitations of flexible thermoelectric power generators, an efficient room‐temperature aqueous selenization reaction that can be completed in air within less than 1 min, to directly fabricate thin β‐Ag2Se films consisting of perfectly crystalline and large columnar grains with both in‐plane randomness and out‐of‐plane [201] preferred orientation, is designed. A high power factor (PF) of 2590 ± 414 µW m−1 K−2 and a figure‐of‐merit (zT) of 1.2 ± 0.42 are obtained from a sample with a thickness of ≈1 µm. The maximum output power density of the best 4‐leg thermoelectric generator sample reach 27.6 ± 1.95 and 124 ± 8.78 W m−2 at room temperature with 30 and 60 K temperature differences, respectively, which may be useful in future flexible thermoelectric devices.
High quality CH3NH3PbI3/PbI2/ZnO p–i–n junction solar cells fabricated in moisture maintained more than 72% of their initial PCE after 250 days storage.
In addition to device
flexibility, the retentivity performance
of photoelectric materials after an extreme reverse-bending process
is intrinsically important and desirable for next-generation advanced
flexible optoelectronics. In this work, we designed and fabricated
large-area flexible SnS2 thin films with a novel nanosheet/amorphous
blended structure to achieve an outstanding flexible photoelectric
performance via a facile evaporation and post-thermal annealing route.
Crystal structure analysis showed that the obtained SnS2 thin films were constructed with nanosheets oriented parallel to
the substrate which were surrounded and connected by the amorphous
component with a smooth surface. This nanosheet/amorphous blended
structure allowed extreme bending because of the adhesive and strain-accommodation
effect that arises from the amorphous components. The assembled SnS2 flexible photodetectors can bear a small bending radius as
low as 1 mm for over 3000 bending–flatting cycles without a
drastic performance decay. In particular, over 90% of the initial
photoelectric responsivity (40.8 mA/W) was maintained even after 1000
bending–flatting cycles. Moreover, the SnS2 thin
film can convert photons to photocurrent over a wide spectral range
from ultraviolet to near infrared. These unique characteristics indicate
that the strategy used in this work is attractive for the development
of future wearable photoelectric and artificial intelligence applications.
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