Thermally-tuning silicon micro-cavities are versatile and beneficial elements in low-cost large-scale photonic integrated circuits (PICs). Traditional metal heaters used for thermal tuning in silicon micro-cavities usually need a thick SiO 2 upper-cladding layer, which will introduce some disadvantages including low response speed, low heating efficiency, low achievable temperature and complicated fabrication processes. In this paper, we propose and experimentally demonstrate thermally-tuning silicon micro-disk resonators by introducing graphene transparent nano-heaters, which contacts the silicon core directly without any isolator layer. This makes the graphene transparent nano-heater potentially to have excellent performances in terms of the heating efficiency, the temporal response and the achievable temperature. It is also shown that the graphene nano-heater is convenient to be used in ultrasmall photonic integrated devices due to the single-atom thickness and excellent flexibility of graphene. Both experiments and simulations imply that the present graphene transparent nano-heater is promising for thermally-tuning nanophotonic integrated devices for e.g. optical modulating, optical filtering/switching, etc.

Graphene is well-known as a two-dimensional sheet of carbon atoms arrayed in a honeycomb structure. It has some unique and fascinating properties, which are useful for realizing many optoelectronic devices and applications, including transistors, photodetectors, solar cells, and modulators. To enhance light-graphene interactions and take advantage of its properties, a promising approach is to combine a graphene sheet with optical waveguides, such as silicon nanophotonic wires considered in this paper. Here we report local and nonlocal optically induced transparency (OIT) effects in graphene-silicon hybrid nanophotonic integrated circuits. A low-power, continuous-wave laser is used as the pump light, and the power required for producing the OIT effect is as low as ∼0.1 mW. The corresponding power density is several orders lower than that needed for the previously reported saturated absorption effect in graphene, which implies a mechanism involving light absorption by the silicon and photocarrier transport through the silicon-graphene junction. The present OIT effect enables low power, all-optical, broadband control and sensing, modulation and switching locally and nonlocally.

Graphene, a well-known two-dimensional sheet, has attracted strong interest for both fundamental studies and applications. Due to its high intrinsic thermal conductivity, graphene has many potential applications in thermal management, such as in heat spreaders and flexible heaters. In this paper, a graphene-based transparent flexible heat conductor for nanophotonic integrated devices is demonstrated. The graphene heat conductor is designed to deliver heat from a non-local traditional metal heater to nanophotonic integrated devices for realizing efficient thermal tuning. With the present graphene heat conductor, a thermally tuning silicon Mach-Zehnder interferometer and micro-disk have been realized with good performance in terms of heating efficiency and temporal response. This indicates that the present graphene-based transparent flexible heat conductor provides an efficient and beneficial heating method for thermally tuning nanophotonic integrated devices.

Graphene is attractive for realizing optoelectronic devices, including photodetectors because of the unique advantages. It can easily co-work with other semiconductors to form a Schottky junction, in which the photo-carrier generated by light absorption in the semiconductor might be transported to the graphene layer efficiently by the build-in field. It changes the graphene conduction greatly and provides the possibility of realizing a graphene-based conductive-mode photodetector. Here we design and demonstrate a silicon-graphene conductive photodetector with improved responsivity and response speed. An electrical-circuit model is established and the graphene-sheet pattern is designed optimally for maximizing the responsivity. The fabricated silicon-graphene conductive photodetector shows a responsivity of up to ~105 A/W at room temperature (27 °C) and the response time is as short as ~30 μs. The temperature dependence of the silicon-graphene conductive photodetector is studied for the first time. It is shown that the silicon-graphene conductive photodetector has ultra-high responsivity when operating at low temperature, which provides the possibility to detect extremely weak optical power. For example, the device can detect an input optical power as low as 6.2 pW with the responsivity as high as 2.4 × 107 A/W when operating at −25 °C in our experiment.

Graphene has emerged as a promising material for active plasmonic devices in the mid-infrared (MIR) region owing to its fast tunability, strong mode confinement, and long-lived collective excitation. In order to realize on-chip graphene plasmonics, several types of graphene plasmonic waveguides (GPWGs) have been investigated and most of them are with graphene ribbons suffering from the pattern-caused edge effect. Here we propose a novel nanoplasmonic waveguide with a pattern-free graphene monolayer on the top of a nano-trench. It shows that our GPWG with nanoscale light confinement, relatively low loss and slowed group velocity enables a significant modulation on the phase shift as well as the propagation loss over a broad band by simply applying a single low bias voltage, which is very attractive for realizing ultra-small optical modulators and optical switches for the future ultra-dense photonic integrated circuits. The strong light-matter interaction as well as tunable slow light is also of great interest for many applications such as optical nonlinearities.