Systematic magnetic, electronic, and electrical studies on the Cu 0.04 Zn 0.96 O/Ga 0.01 Zn 0.99 O cell structure grown on (001) sapphire by the pulsed laser deposition technique show that the Cu multivalent (Cu M+ ) ions modulate magnetic and resistive states of the cells. The magnetic moment is found to be reduced by ∼30% during the high resistance state (HRS) to low resistance state (LRS) switching. X-ray photoelectron spectroscopy results reveals an increase of the Cu + /Cu 2+ oxidation state ratio (which has been determined by the relative positions of the Fermi level and the Cu acceptor level) during the HRS to LRS transition. This decreases the effective spin-polarized Cu 2+ –V ö –Cu + channels and thus the magnetic moment. A conduction mechanism involving the formation of conductive filaments from the coupling of the Cu M+ ions and V ö has been suggested.
Discovering multifunctional materials is of paramount importance for advancing the science and technology. Herein, we report on an optical phenomenon modulated by an electrical process that happened at the metal-ZnO:Cu junction, for which the light emission intensity from the photoluminescence is tuned reversibly by applying electric bias to the junction. Importantly, these observations were correlated with the x-ray absorption measurements, detecting prominent flips in Cu+/Cu2+ oxidation state occupations in ZnO:Cu film as a function of the resistive switching. Moreover, further analysis of the x-ray absorption data revealed an additional prominent correlation - the signals interpreted as the Zn-O bond fingerprints also exhibited the modulations. By considering the whole set of data, we proposed a scenario explaining the modulation phenomena.
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