Flexible and functional perovskite oxide sheets with high orientation and crystallization are the next step in the development of next-generation devices. One promising synthesis method is the lift-off and transfer method using a watersoluble sacrificial layer. However, the suppression of cracks during lift-off is a crucial problem that remains unsolved. In this study, we demonstrated that this problem can be solved by depositing amorphous Al 2 O 3 capping layers on oxide sheets. Using this simple method, over 20 mm 2 of crack-free, deepultraviolet transparent electrode La:SrSnO 3 and ferroelectric Ba 0.75 Sr 0.25 TiO 3 flexible sheets were obtained. By contrast, the sheets without any capping layers broke. The obtained sheets showed considerable flexibility and high functionality. The La:SrSnO 3 sheet simultaneously exhibited a wide bandgap (4.4 eV) and high electrical conductivity (>10 3 S/cm). The Ba 0.75 Sr 0.25 TiO 3 sheet exhibited clear room-temperature ferroelectricity with a remnant polarization of 17 μC/cm 2 . Our findings provide a simple transfer method for obtaining large, crack-free, highquality, single-crystalline sheets.
Thin film transistor (TFT) with deep-UV transparency is a promising component for the next generation optoelectronics such as biosensor. Among several deep-UV transparent oxide semiconductors, SrSnO3 is an excellent candidate material owing to its wide bandgap (~4.6 eV) and rather high carrier electron mobility. Here we show fabrication and operation mechanism of the SrSnO3-TFT. We fabricated metal-insulatorsemiconductor structure on the 28-nm-thick SrSnO3 film. The resultant TFT showed clear transistor characteristics; the on-to-off current ratio was ~10 2 , the threshold voltage was ~ −18 V, and the field effect mobility was ~14 cm 2 V −1 s −1 . The effective thickness of the electron channel gradually increased with gate voltage and saturated at ~5 nm, which was evaluated by the thermopower modulation. The present results would be helpful for utilizing deep-UV transparent TFTs for biosensing applications.
La-doped BaSnO3 (LBSO), which exhibits both high electron mobility and visible-light transparency, is a promising transparent electrode/transistor material that does not require expensive elements such as indium. However, because a...
Thin film transistor (TFT) with deep-UV transparency is a promising component for the next generation optoelectronics such as biosensor. Among several deep-UV transparent oxide semiconductors, SrSnO3 is an excellent candidate material owing to its wide bandgap (~4.6 eV) and rather high carrier electron mobility. Here we show fabrication and operation mechanism of the SrSnO3-TFT. We fabricated metal-insulatorsemiconductor structure on the 28-nm-thick SrSnO3 film. The resultant TFT showed clear transistor characteristics; the on-to-off current ratio was ~10 2 , the threshold voltage was ~ −18 V, and the field effect mobility was ~14 cm 2 V −1 s −1 . The effective thickness of the electron channel gradually increased with gate voltage and saturated at ~5 nm, which was evaluated by the thermopower modulation. The present results would be helpful for utilizing deep-UV transparent TFTs for biosensing applications.
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