Gallium phosphide (GaP) nanowires were synthesized by heating
Ga2O3
and red phosphor powders. The GaP nanowires have diameters from to nm and length up to several micrometres. The nanowires with diameters nm are usually straight and partly covered by some thin wires on the clean surface.
However, the curving wires with diameters from to nm usually twist around each other. All the GaP nanowires investigated have orientation with structure defects such as twins. Photoluminescence spectrum
measurement reveals an obvious redshift and holds promise for some potential application
in optical nanodevices in the future.
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