PACS number(s): 01.40.Fk
Abstract:Student content knowledge and general reasoning abilities are two important areas in education practice and research. However, there hasn't been much work in physics education that clearly documents the possible interactions between content learning and the development of general reasoning abilities. In this paper, we report one study of a systematic research to investigate the possible interactions between students' learning of physics content knowledge and the development of general scientific reasoning abilities. Specifically, this study seeks to answer the research question of whether and to what extent content learning may affect the development of general reasoning abilities. College entrance testing data of freshman college students in both USA and China were collected using three standardized tests, FCI, BEMA, and Lawson's Classroom Test of Scientific Reasoning (Lawson Test). The results suggest that years of rigorous training of physics knowledge in middle and high schools have made significant impact on Chinese students' ability in solving physics problems, while such training doesn't seem to have direct effects on their general ability in scientific reasoning, which was measured to be at the same level as that of the students in USA. Details of the curriculum structures in the education systems of USA and China are also compared to provide a basis for interpreting the assessment data.
Combining angle-resolved photoemission spectroscopy and magneto-transport measurements, we systematically investigated the possible origin of the extreme magnetoresistance in Pr/Sm monoantimonides/bismuthides (PrSb, SmSb, PrBi, SmBi). Our photoemission measurements reveal that the bulk band inversion and surface states are absent (present) in Pr/Sm antimonides (bismuthides), implying that topological surface states are unlikely to play an important role for the observed extreme magnetoresistance. We found that the electron-hole compensation is well satisfied in all these compounds and the bulk band structure exhibits no obvious temperature dependence from 10 K up to 150 K. Simultaneous fittings of the magnetoresistance and Hall coefficient reveal that the carrier mobility is dramatically enhanced at low temperature, which naturally explains the suppression of extreme magnetoresistance at high temperatures. Our results therefore show that the extreme magnetoresistance in these compounds can be well accounted for by the two-band model with good electron-hole compensation. Finally, we found that both PrSb and SmSb exhibit highly linear bulk bands near the X point and lie close to the transition point between a topologically trivial and nontrivial phase, which might be relevant for the observed anomalous quantum oscillations.
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