Anisotropic two-dimensional (2D) van der Waals (vdW) layered materials, with both scientific interest and application potential, offer one more dimension than isotropic 2D materials to tune their physical properties. Various physical properties of 2D multi-layer materials are modulated by varying their stacking orders owing to significant interlayer vdW coupling. Multilayer rhenium disulfide (ReS2), a representative anisotropic 2D material, was expected to be randomly stacked and lack interlayer coupling. Here, we demonstrate two stable stacking orders, namely isotropic-like (IS) and anisotropic-like (AI) N layer (NL, N > 1) ReS2 are revealed by ultralow- and high-frequency Raman spectroscopy, photoluminescence and first-principles density functional theory calculation. Two interlayer shear modes are observed in AI-NL-ReS2 while only one shear mode appears in IS-NL-ReS2, suggesting anisotropic- and isotropic-like stacking orders in IS- and AI-NL-ReS2, respectively. This explicit difference in the observed frequencies identifies an unexpected strong interlayer coupling in IS- and AI-NL-ReS2. Quantitatively, the force constants of them are found to be around 55-90% of those of multilayer MoS2. The revealed strong interlayer coupling and polytypism in multi-layer ReS2 may stimulate future studies on engineering physical properties of other anisotropic 2D materials by stacking orders.

Two-dimensional magnets have received increasing attention since Cr2Ge2Te6 andCrI3 were experimentally exfoliated and measured in 2017. Although layered ferromagnetic metals were demonstrated at room temperature, a layered ferromagnetic semiconductor with high Curie temperature (Tc) is yet to be unveiled.Here, we theoretically predicted a family of high Tc ferromagnetic monolayers, namely MnNX and CrCX (X=Cl, Br and I; C=S, Se and Te). Their Tc values were predicted from over 100 K to near 500 K with Monte Carlo simulations using an anisotropic Heisenberg model. Eight members among them show semiconducting bandgaps varying from roughly 0.23 to 1.85 eV. These semiconducting monolayers also show extremely large anisotropy, i.e. ~10 1 for effective masses and ~10 2 for carrier mobilities, along the two in-plane lattice directions of these layers. Additional orbital anisotropy leads to a spin-locked linear dichroism, in different from previously known circular and linear dichroisms in layered materials. Together with the mobility anisotropy, it offers a spin-, dichroism-and mobility-anisotropy locking. These results manifest the potential of this 2D family for both fundamental research and high performance spin-dependent electronic and optoelectronic devices.

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Te few-layer allotropes could be selectively stabilized and be reversibly transformed using charge doping. Among them, a novel chiral metallic phase emerges in a Te trilayer under electron doping.

Atomic substitution offers an important route to achieve compositionally engineered two-dimensional nanostructures and their heterostructures. Despite the recent research progress, the fundamental understanding of the reaction mechanism has still remained unclear. Here, we reveal the atomic substitution mechanism of two-dimensional atomic layered materials. We found that the atomic substitution process depends on the varying lattice constant (strain) in monolayer crystals, dominated by two strain-tuning (self-promoted and self-limited) mechanisms using density functional theory calculations. These mechanisms were experimentally confirmed by the controllable realization of a graded substitution ratio in the monolayers by controlling the substitution temperature and time and further theoretically verified by kinetic Monte Carlo simulations. The strain-tuning atomic substitution processes are of general importance to other two-dimensional layered materials, which offers an interesting route for tailoring electronic and optical properties of these materials.