Polycrystalline Fe3O4∕amorphous Si heterostructure was prepared by facing-target sputtering and its microstructure and electrical transport properties were studied. The polycrystalline Fe3O4 layer was grown in column structure. The electrical transport mechanism across the disordered interface between polycrystalline Fe3O4 and amorphous Si layers is tunneling above the Verwey temperature [Nature (London) 144, 327 (1939)] of 120K. Nonlinear I-V characteristics of the Schottky diode reveal thermionic emission∕diffusion mechanism below the Verwey temperature, and Schottky barrier height is 0.27eV, calculated by a standard theory of thermionic emission∕diffusion. Based on a simplified band structure, the spin polarization of the polycrystalline Fe3O4 layer was determined to be ∼45%.
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