Solar-blind ultraviolet photodetectors have potential applications in space communication, ozone hole monitoring and missile tracking. Amorphous Ga 2 O 3 (a-Ga 2 O 3 ) films are deposited by a simple radio frequency magnetron sputtering at different deposition temperatures. Fully transparent devices on a quartz substrate are fabricated with high responsivity, wide detection range and good repeatability. With the increase of Ga 2 O 3 deposited temperature, the concentration of oxygen vacancy increases accordingly, leading to a wide detection range from 250 to 325 nm and high responsivity (138 A W −1 at 5 V bias). The underlying mechanism has been discussed and analyzed. Our results should advance the application of a-Ga 2 O 3 -based ultraviolet photodetectors and other relevant devices.
A bendable and thermally stable solar-blind ultraviolet (UV) photodetector has been demonstrated based on Ni/amorphous Ga2O3 (a-Ga2O3)/a-AlN/Cu foil structure. Here, Cu foil can simultaneously act as a bendable substrate and withstand a high-temperature environment. The ultra-wide bandgap a-AlN insulating layer can withstand mechanical tensile stress and effectively act as an insulating layer between a-Ga2O3 and Cu. Thus, the a-Ga2O3-based photodetector shows stable UV response characteristics with different bending radii and temperatures. The photodetector has high responsivity of 0.518 A W−1 and a fast response time of 0.17 s under 200 °C temperature with a 1.46 cm bending radius. With exceptional bendability and thermal stability, this a-Ga2O3-based photodetector has potential applications in harsh environments such as high-power bendable electron devices, flame detection, etc.
Flexible and thermally stable resistive switching (RS) behaviors were studied based on a Ta/TaOx/stainless steel (SS) structure. This memory device demonstrates good mechanical endurance and information retention using the amorphous characteristic of TaOx. In addition, a 500 °C thermal annealing treatment when applied to a Ta/TaOx/SS memory device can effectively improve its thermal stability, and especially its resistance retention properties. Stable and flexible RS behaviors were observed at a test temperature of 200
°C for the memory device annealed at 500 °C. The improved thermal stability may be attributed to the formation of an amorphous-nanocrystalline mixed structure in the annealed TaOx film, preventing degradation of the resistance state. The presented RS behavior, with remarkable flexibility and thermal tolerance has potential applications in harsh environments, such as high-temperature flexible electronic devices.
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