Films of the solid solution system
ZnxCdfalse(1−xfalse)S
have been produced by simultaneous evaporation from two separately controlled sources onto a single substrate. Films of uniform composition were made covering the full range from 0 to 100%
normalZnS
concentration, and the dependence of energy gap, crystal habit, and lattice parameter on composition was investigated. Optical transmission edge measurements yielded a nearly linear dependence of gap width on composition between the values of 2.35 ev for pure cadmium sulfide and 3.35 ev for pure zinc sulfide. X‐ray diffraction specimens were prepared by scraping the films from the substrates. The powder patterns obtained showed that a gradual transition from the wurtzite structure typical of CdS to the characteristic
normalZnS
zinc‐blende form takes place between 60 and 85%
normalZnS
concentration. At compositions where both modifications are present, the basal plane spacing is the same for the hexagonal (002) and cubic (111). Equivalent hexagonal lattice parameters could therefore be defined for the cubic form, and a and c calculated for all compositions. The results show good agreement with data obtained by others on bulk material.
As a part of a thin-film device study, an investigation was conducted of the conditions under which thin metal films cease to be continuous. This paper discusses the effects of annealing on thin gold films that were sandwiched between two evaporated layers of zinc sulfide.
The electrical resistance of films in the 60- to 80-Å thickness range was monitored during constant-temperature anneals in a helium atmosphere. A portion of the resistance-time curve is found to follow the relationship R=R0eαt, where α depends on the temperature according to the equation α=α0e−E/kT. Electron micrographs show that the resistance increase is due to the agglomeration of the films, and it is suggested that the latter equation defines an activation energy for migration of gold atoms. A value of E∼1.8 eV is obtained for this gold-zinc sulfide system.
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