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The band gap bowing and the electron localization of Ga x In 1−x N are calculated using both local density approximation and screened-exchange local density functional (sX-LDA) method. The calculated sX-LDA band gaps are in much better agreement with the experimentally observed values with errors of -0.26 and 0.09 eV for bulk GaN and InN, respectively, compared with the local density approximation (LDA) estimations, whose band gap errors are 1.33 and 0.81 eV, correspondingly. In contrast to the gap itself, the band gap bowing parameter is found to be very similar in sX-LDA and LDA. We identify the localization of hole states in Ga x In 1−x N alloys along In-N-In chain. The predicted localization is stronger in sX-LDA.