637 wileyonlinelibrary.com COMMUNICATION www.MaterialsViews.com www.advopticalmat.deThe development in nanotechnology has enabled the manufacture of quantum dot nanocrystals (QD NCs), which have been extensively investigated. They have unique properties such as large absorption cross-section, high quantum yields, broad excitation spectra, wavelength tunability of fl uorescence emission simply by size, better color purity, high stability, and long lifetime. As a result, QDs are highly promising for a wide variety of applications such as light-emitting diodes (LEDs), photovoltaic and photodetector devices, displays, lasers, spectroscopy, telecommunications, optical information processing, biomedical imaging, quantum computation, and so on. [1][2][3][4][5][6] Because of the benefi ts mentioned above, QDs are especially regarded as a potential replacer for rare-earth phosphors in obtaining photometrically effi cient white LEDs if large-sized, economical and eco-friendly production can be realized. [ 7,8 ] QD lasers are semiconductor lasers that use QDs as a gain medium. In contrast to the colloidal NCs based QDs used in this work, the conventional inorganic QD lasers were primarily pursued by using molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD) for forming selfassembled QDs via Stranski-Kastranow growth mode. In addition, recent works had also shown the possibility of growing the QDs by using selective area epitaxy (SAE) method. [9][10][11][12] QD lasers can lase emissions with improved features of linewidth narrowing, decreased lasing threshold and relative intensity noise, and temperature insensitivity because charge carriers experience the quantum confi nement effect in the confi ned 3D nanoscale space in the QDs. [ 13,14 ] These superior features make QD lasers exhibit lasing performances similar to gas lasers so that the device performances of the QD lasers are superior to those of conventional semiconductor lasers with active media in bulk or in the quantum well. In addition, QDs can be designed to lase with a variety of wavelengths by appropriately selecting the size, shape, and/or composite of the dots. This property indicates that QD lasers can be operated at wavelengths where traditional solid-state lasers cannot lase. The QD laser can lase by amplifying the fl uorescence of QDs in a resonant cavity. Fluorescence emission is induced via the photo-or electro-excitation of the valence electron with a specifi c energy or wavelength to the conduction band. A photon with a lower energy or a longer wavelength is then emitted after the excited electron returns to the ground state and recombines with the hole. In addition to the nanocrystal approach described here, it is important to note that III-Nitride based semiconductors have led to high performance LEDs and lasers emitting in the visible spectral regimes. The advances in III-Nitride semiconductors have been focused on the advances in semi-/non-polar quantum well, [ 15,16 ] quantum well with large optical matrix element, [17][18...