The main aim of this research work is to show the simultaneous effects of ferro-particles ({\text{Fe}_{3}}{\text{O}_{4}}) and thermal radiation on the natural convection of non-Newtonian nanofluid flow between two vertical flat plates. The studied nanofluid is created by dispersing ferro-particles ({\text{Fe}_{3}}{\text{O}_{4}}) in sodium alginate (SA), which is considered as a non-Newtonian base fluid. Resolution of the resulting set of coupled non-linear second order differential equations characterizing dynamic and thermal distributions (velocity/temperature) is ensured via the Adomian decomposition method (ADM). Thereafter the obtained ADM results are compared to the Runge–Kutta–Feldberg based shooting data. In this investigation, a parametric study was conducted showing the influence of varying physical parameters, such as volumic fraction of {\text{Fe}_{3}}{\text{O}_{4}} nanoparticles, Eckert number ({E_{c}}) and thermal radiation parameter (N), on the velocity distribution, the skin friction coefficient, the heat transfer rate and the temperature distribution. Results obtained also show the advantages of ferro-particles over other types of standard nanoparticles. On the other hand, this investigation demonstrates the accuracy of the adopted analytical ADM technique.
In this experimental work, pure nickel oxide and Al-doped NiO thin films have successfully been elaborated onto glass substrates by solar spray pyrolysis technique. The substrates were heated at around 450°C using a solar heater (furnace). The structural, optical and electrical properties of the elaborated Al-doped films have been studied at different atomic percentage ratios (0, 0.5, 1, 1.5 and 2 at. %). The results of Al-doped NiO films XRD patterns were, the formation of (NiO) phase under a cubic crystalline structure (polycrystalline) with a strong favored orientation along (111) plane were noticed at all sprayed films. When Al doping ratio reaches 1 at.%, an growth in crystallite size over 31.9 nm was obtained denoting the nano-structure of the product, which confirmed by SEM images. In addition, aluminum oxide Al2O3 was clearly observed at 1.5 at.% Al ratio. Otherwise, all thin films have a good optical transmission in the visible region of about 65%, the optical band gap energy decreased from 3.69 to 3.64 eV with increasing Al doping ratio. It is shown that the layer deposited with 0.5 at.% has less disorder with few defects. The investigation on electrical properties of elaborated thin films confirmed that the conductivity of NiO films was improved, after doping them with Al which affirms their p-type character of semiconductor. However, an addition of an excessive quantity of Al content causes the formation of Al2O3 which leads to a decrease in the conductivity. It is worth mentioning that the Al content of 0.5 at.% is the optimum ratio in terms of electrical conductivity and formation defect. Al-doped NiO can be used in various optoelectronic devices due to its good transparency and high electrical conductivity.
In the present study, porous silicon films were prepared on N-and P-type silicon wafer (100) crystallographic orientations. We have investigated the influence of the different anodization parameters and silicon wafers on the properties of the obtained porous silicon layer such as thickness and porosity. The reflectance measurement of the prepared samples has presented reduction of reflection due to the porous layers and suggests the antireflective character of the realized porous layer.
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