Large scale of straight Ga 2 0 3 nanowires is grown on a fused silica substrate by a simple catalyst-free CVD method using Ga metal and N 2 / H 2 0 reactants. The Ga 2 0 3 nanowires with diameters ranging from 60 to 150 nm can be as long as several micrometers. XRD and TEM analyses indicate that the Ga 2 0 3 nanowires exhibit a monoclinic structure. PL characteristic of the Ga 2 O 3 nanowires shows a UV emission of 375 nm at room temperature.
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