Although Weyl fermions have proven elusive in high-energy physics, their existence as emergent quasiparticles has been predicted in certain crystalline solids in which either inversion or timereversal symmetry is broken [1][2][3][4]. Recently they have been observed in transition metal monopnictides (TMMPs) such as TaAs, a class of noncentrosymmetric materials that heretofore received only limited attention [5][6][7]. The question that arises now is whether these materials will exhibit novel, enhanced, or technologically applicable electronic properties. The TMMPs are polar metals, a rare subset of inversion-breaking crystals that would allow spontaneous polarization, were it not screened by conduction electrons [8][9][10]. Despite the absence of spontaneous polarization, polar metals can exhibit other signatures of inversion-symmetry breaking, most notably second-order nonlinear optical polarizability, χ (2) , leading to phenomena such as optical rectification and second-harmonic generation (SHG). Here we report measurements of SHG that reveal a giant, anisotropic χ (2) in the TMMPs TaAs, TaP, and NbAs. With the fundamental and second harmonic fields oriented parallel to the polar axis, the value of χ (2) is larger by almost one order of magnitude than its value in the archetypal electrooptic materials GaAs [11] and ZnTe [12], and in fact larger than reported in any crystal to date.The last decade has witnessed an explosion of research investigating the role of bandstructure topology, as characterized for example by the Berry curvature in momentum space, in the electronic response functions of crystalline solids [13]. While the best established example is the intrinsic anomalous Hall effect in time-reversal breaking systems [14], several nonlocal [15,16] and nonlinear effects related to Berry curvature generally [17,18]and in WSM's specifically [19,20] have been predicted in crystals that break inversion symmetry. Of these, the most relevant to this work is a theoretical formulation [21] of SHG in terms of the shift vector, which is a quantity related to the difference in Berry connection between two bands that participate in an optical transition. * Electronic address: liangwu@berkeley.edu † Electronic address: jworenstein@lbl.gov Fig. 1a and caption provide a schematic and description of the optical set-up for measurement of SHG in TMMP crystals . Figs. 1b,c show results from a (112) surface of TaAs. The SH intensity from this surface is very strong, allowing for polarization rotation scans with signal-to-noise ratio above 10 6 . In contrast, SHG from a TaAs (001) surface is barely detectable (at least six orders of magnitude lower than (112) surface). Below, we describe the use of the set-up shown in Fig. 1a to characterize the second-order optical susceptibility tensor, χ ijk , defined by the relation,As a first step, we determined the orientation of the high-symmetry axes in the (112) surface, which are the [1,-1,0] and [1,1,-1] directions. To do so, we simultaneously rotated the linear polarization of th...

Topological insulators (TIs) are newly discovered states of matter with robust metallic surface states protected by the topological properties of the bulk wavefunctions [1][2][3][4][5][6]. A quantum phase transition (QPT) from a TI to a conventional insulator and a change in topological class can only occur when the bulk band gap closes [3]. In this work, we have utilized time-domain terahertz spectroscopy (TDTS) to investigate the low frequency conductance in (Bi 1−x In x ) 2 Se 3 as we tune through this transition by indium substitution. Above certain substitution levels we observe a collapse in the transport lifetime that indicates the destruction of the topological phase. We associate this effect with the threshold where states from opposite surfaces hybridize. The substitution level of the threshold is thickness dependent and only asymptotically approaches the bulk limit x ≈ 0.06 where a maximum in the midinfrared absorption is exhibited. This absorption can be identified with the bulk band gap closing and a change in topological class. The correlation length associated with the QPT appears as the evanescent length of the surface states. The observation of the thickness-dependent collapse of the transport lifetime shows the unusual role that finite size effects play in this topological QPT.The topological character of TIs is determined by the nature of their valence-band wave functions, which can be quantified by 4 Z 2 invariants. Fu and Kane have shown that for inversion symmetric crystals it is possible to evaluate these invariants directly with knowledge of the parity of Bloch wave functions for the occupied electronic states at high symmetry points in the Brillouin zone [10]. Although their argument is formulated for inversion symmetric systems, a material's topological classification does not require inversion or translation symmetry. Therefore the expectation is that the alloying of known TIs with lighter elements by reducing spin-orbit coupling or the tuning of lattice constant can cause the bulk band gap ∆ to close and invert at a quantum critical point where the topological class changes (See cartoon * Electronic address: npa@pha.jhu.edu Fig. 1a). This has been investigated in the thalliumbased ternary chalcogenide alloy TlBi(S 1−x Se x ) 2 [7-9], but thus far only with photoemission (Supplementary Information (SI) section B). Although signatures of topological surface state (TSS) conduction have been found in Bi 2 Se 3 [11-14], a demonstration that the surface transport changes dramatically when the band gap closes and the bulk changes topological class [15] would be strong evidence for the topological nature of these materials and is still lacking. In this regard, it was pointed out recently that indium (In) substitutes for bismuth to form a solid solution in Bi 2 Se 3 and that the non-topological end member In 2 Se 3 of the (Bi 1−x In x ) 2 Se 3 series shares the common rhombohedral D 5 3d structure with Bi 2 Se 3 [6]. In Ref.[6] a topological to trivial transition was observed in a range x ∼ 0.0...

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When a polarized light beam is incident upon the surface of a magnetic material, the reflected light undergoes a polarization rotation1. This magneto-optical Kerr effect (MOKE) has been intensively studied in a variety of ferro- and ferrimagnetic materials because it provides a powerful probe for electronic and magnetic properties2, 3 as well as for various applications including magneto-optical recording4. Recently, there has been a surge of interest in antiferromagnets (AFMs) as prospective spintronic materials for high-density and ultrafast memory devices, owing to their vanishingly small stray field and orders of magnitude faster spin dynamics compared to their ferromagnetic counterparts5–9. In fact, the MOKE has proven useful for the study and application of the antiferromagnetic (AF) state. Although limited to insulators, certain types of AFMs are known to exhibit a large MOKE, as they are weak ferromagnets due to canting of the otherwise collinear spin structure10–14. Here we report the first observation of a large MOKE signal in an AF metal at room temperature. In particular, we find that despite a vanishingly small magnetization of M ~0.002 µB/Mn, the non-collinear AF metal Mn3Sn15 exhibits a large zero-field MOKE with a polar Kerr rotation angle of 20 milli-degrees, comparable to ferromagnetic metals. Our first-principles calculations have clarified that ferroic ordering of magnetic octupoles in the non-collinear Néel state16 may cause a large MOKE even in its fully compensated AF state without spin magnetization. This large MOKE further allows imaging of the magnetic octupole domains and their reversal induced by magnetic field. The observation of a large MOKE in an AF metal should open new avenues for the study of domain dynamics as well as spintronics using AFMs.

Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In2Se3/(Bi0.5In0.5)2Se3 heterostructure, we introduce a quantum generation of Bi2Se3 films with an order of magnitude enhanced mobilities than before. This scheme has led to the first observation of the quantum Hall effect in Bi2Se3.

We report the THz response of thin films of the topological insulator Bi2Se3. At low frequencies, transport is essentially thickness independent showing the dominant contribution of the surface electrons. Despite their extended exposure to ambient conditions, these surfaces exhibit robust properties including narrow, almost thickness-independent Drude peaks, and an unprecedentedly large polarization rotation of linearly polarized light reflected in an applied magnetic field. This Kerr rotation can be as large as 65• and can be explained by a cyclotron resonance effect of the surface states.Ordered states of matter are typically categorized by their broken symmetries. With the ordering of spins in a ferromagnet or the freezing of a liquid into a solid, the loss of symmetry distinguishes the ordered state from the disordered one. In contrast, topological states are distinguished by specific topological properties that are encoded in their quantum mechanical wavefunctions [1]. Frequently, a consequence of these properties is that there are robust "topologically protected" states on the sample's boundaries. The edge states of the quantum Hall effect (QHE) are the classic example [2]. In the last few years, it was realized that another class of such topological matter may exist in 3D band insulators with large spin-orbit interaction [3][4][5][6]. These so-called topological insulators are predicted to host robust surface states, which exhibit a number of interesting properties including spin helicity, immunity to back-scattering, and weak anti -localization. There are predictions of a number of unusual phenomena associated with these surface states, including a proximity-effect-induced exotic superconducting state with Majorana fermions bound to a vortex [7,8] and an axion electromagnetic response [9,10], and proposals for applications, such as their use in terahertz (THz) devices [11].Most of the signatures of topological behavior in these materials thus far have come from surface probes such as angle resolved photoemission (ARPES) and scanning tunneling spectroscopy [12][13][14][15][16][17]. These experiments have revealed that the surface states indeed show signatures of the predicted topological properties, such as a Diraclike dispersion, chiral spin textures, and the absence of backscattering. Direct observation of the topological behavior in transport has been hampered by the lack of a true bulk insulating state. Only recently have transport experiments started to distinguish the surface contribution from the bulk [18][19][20][21].As opposed to the case of the quantum Hall effect, in topological insulators, the quantization of the offdiagonal conductivity is not a requirement for the existence of the topological state. This, along with the problem of bulk conduction, has made finding a unique signature of this state difficult. It has been proposed that topological insulators may be characterized by their electrodynamic properties [9] due to the existence of an axionic term in the action ∆L = αθ dxdtE · B, where...

We report measurements of optical absorption in the zigzag antiferromagnet α-RuCl_{3} as a function of temperature T, magnetic field B, and photon energy ℏω in the range ∼0.3-8.3 meV, using time-domain terahertz spectroscopy. Polarized measurements show that threefold rotational symmetry is broken in the honeycomb plane from 2 to 300 K. We find a sharp absorption peak at 2.56 meV upon cooling below the Néel temperature of 7 K at B=0 that we identify as the magnetic-dipole excitation of a zero-wave-vector magnon, or antiferromagnetic resonance (AFMR). With the application of B, the AFMR broadens and shifts to a lower frequency as long-range magnetic order is lost in a manner consistent with transitioning to a spin-disordered phase. From a direct, internally calibrated measurement of the AFMR spectral weight, we place an upper bound on the contribution to the dc susceptibility from a magnetic excitation continuum.

Based on specific heat and magnetoresistance measurements, we report that a "heavy" electronic state exists below T ≈ 20 K in KNi 2 Se 2 , with an increased carrier mobility and enhanced effective electronic band mass, m* = 6m b to 18m b . This "heavy" state evolves into superconductivity at T c = 0.80(1) K. These properties resemble that of a many-body heavy-fermion state, which derives from the hybridization between localized magnetic states and conduction electrons. Yet, no evidence for localized magnetism or magnetic order is found in KNi 2 Se 2 from magnetization measurements or neutron diffraction. Instead, neutron pair-distribution-function analysis reveals the presence of local charge-density-wave distortions that disappear on cooling, an effect opposite to what is typically observed, suggesting that the low-temperature electronic state of KNi 2 Se 2 arises from cooperative Coulomb interactions and proximity to, but avoidance of, charge order.