Two-dimensional (2D)
MoS
2
is a promising material for
future electronic and optoelectronic applications. 2D MoS
2
devices have been shown to perform reliably under irradiation conditions
relevant for a low Earth orbit. However, a systematic investigation
of the stability of 2D MoS
2
crystals under high-dose gamma
irradiation is still missing. In this work, absorbed doses of up to
1000 kGy are administered to 2D MoS
2
. Radiation damage
is monitored via optical microscopy and Raman, photoluminescence,
and X-ray photoelectron spectroscopy techniques. After irradiation
with 500 kGy dose, p-doping of the monolayer MoS
2
is observed
and attributed to the adsorption of O
2
onto created vacancies.
Extensive oxidation of the MoS
2
crystal is attributed to
reactions involving the products of adsorbate radiolysis. Edge-selective
radiolytic etching of the uppermost layer in 2D MoS
2
is
attributed to the high reactivity of active edge sites. After irradiation
with 1000 kGy, the monolayer MoS
2
crystals appear to be
completely etched. This holistic study reveals the previously unreported
effects of high-dose gamma irradiation on the physical and chemical
properties of 2D MoS
2
. Consequently, it demonstrates that
radiation shielding, adsorbate concentrations, and required device
lifetimes must be carefully considered, if devices incorporating 2D
MoS
2
are intended for use in high-dose radiation environments.
Pyrene derivatives with biomolecular functional groups (lysine and taurine) have been used to produce stable, concentrated and biocompatible graphene dispersions with amphoteric properties.
Utilizing reducing species generated by high-energy photons offers an alternative strategy to prepare metal nanoparticles (NPs) in the absence of a foreign reductant.
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