In our research, the glass was used as a substrate for H ion sensitive field effect transistor (ISFET). The sensitive characteristics of five structures for separative extend gate ion sensitive field effect transistors (EGFET) were studied, which include tin oxide (Sn02) I aluminum I micro slide glass, tin oxide I aluminum I coming glass, indium tin oxide (ITO) glass, tin oxide I indium tin oxide glass and tin oxide I micro slide glass. Indium tin oxide (ITO) thin film is the first time used as a H ion sensitive film which has a linear pH sensitivity ofNerstern response, about 58 mV/pH, between pH2 and pHl2. In addition, the sensing area effect of the tin oxide I glass, tin oxide I ITO glass and ITO glass structure which without Al conductive layer will be discussed.
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