Significant improvements to the thermoelectric figure of merit ZT have emerged in recent years, primarily due to the engineering of material composition and nanostructure in inorganic semiconductors (ISCs). However, many present high-ZT materials are based on low-abundance elements that pose challenges for scale-up, as they entail high material costs in addition to brittleness and difficulty in large-area deposition. Here we demonstrate a strategy to improve ZT in conductive polymers and other organic semiconductors (OSCs) for which the base elements are earth-abundant. By minimizing total dopant volume, we show that all three parameters constituting ZT vary in a manner so that ZT increases; this stands in sharp contrast to ISCs, for which these parameters have trade-offs. Reducing dopant volume is found to be as important as optimizing carrier concentration when maximizing ZT in OSCs. Implementing this strategy with the dopant poly(styrenesulphonate) in poly(3,4-ethylenedioxythiophene), we achieve ZT  =  0.42 at room temperature.

Thermal conductivity is an important property for polymers, as it often affects product reliability (for example, electronics packaging), functionality (for example, thermal interface materials) and/or manufacturing cost. However, polymer thermal conductivities primarily fall within a relatively narrow range (0.1-0.5 W m(-1) K(-1)) and are largely unexplored. Here, we show that a blend of two polymers with high miscibility and appropriately chosen linker structure can yield a dense and homogeneously distributed thermal network. A sharp increase in cross-plane thermal conductivity is observed under these conditions, reaching over 1.5 W m(-1) K(-1) in typical spin-cast polymer blend films of nanoscale thickness, which is approximately an order of magnitude larger than that of other amorphous polymers.

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