A comparative mechanism investigation on the structural and optoelectronic properties of i-ZnO thin films, deposited on the silicon substrates at various temperatures were conducted. The experimental results verified that the i-ZnO films deposited at a low temperature have better quality over the conventional high temperature deposited ones. This low temperature deposition by using vapor cooling condensation technique has been successfully used to fabricate optoelectronic devices, such as UV light-emitting diodes and UV photodetectors. The mechanisms responsible for the fact that the low temperature deposited samples had better quality were analyzed in terms of the adsorption/desorption and diffusion of ZnO particles in the growth process.
AlN codoped ZnO films were deposited on sapphire substrates at low temperature using a cosputter system under various N2/(N2 + Ar) flow ratios. To investigate the nitrogen function, the ratio of nitrogen ambient was varied during cosputtering. AlN codoped ZnO films with various crystallographic structures and bonding configurations were measured. With an adequate nitrogen atmosphere deposition condition and postannealing temperature at 450 °C, the p-type conductive behaviors of AlN codoped ZnO films were achieved due to the formation of Zn–N bonds. According to the low-temperature photoluminescence spectra, the binding energy (EA) of 0.16 eV for N acceptors can be calculated. Using time-resolved photoluminescence measurement, the carrier lifetime in AlN codoped ZnO films increases due to the reduction of oxygen vacancies caused by the occupation of adequate nitrogen atoms.
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