We have studied the characteristics of current-induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin–orbit coupling. It was found that within some parameter regions the magnitude of the current-induced nonequilibrium spin polarization density in such structures will increase (or decrease) with the decrease (or increase) of the charge current density, in contrast to that found in normal spin–orbit coupled semiconductor structures. It was also found that the unusual characteristics of the current-induced nonequilibrium spin polarization in such structures can be well explained by the effect of the Andreev reflection.
By solving the Bogoliubov-de Gennes equation, the influence of the interplay of Rashba spin-orbit coupling, induced superconducting pair potential, and external magnetic field on the spin-polarized coherent charge transport in ferromagnet/semiconductor nanowire/ferromagnet double barrier junctions is investigated based on the Blonder-Tinkham-Klapwijk theory. The coherence effect is characterized by the strong oscillations of the charge conductance as a function of the bias voltage or the thickness of the semiconductor nanowire, resulting from the quantum interference of incoming and outgoing quasiparticles in the nanowire. Such oscillations can be effectively modulated by varying the strength of the Rashba spin-orbit coupling, the thickness of the nanowire, or the strength of the external magnetic field. It is also shown that two different types of zero-bias conductance peaks may occur under some particular conditions, which have some different characteristics and may be due to different mechanisms.
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