This work reports a new lead bromide hybrid featuring capped octahedral units. Comparative studies reveal the role of lone pair activity in governing local coordination geometry of the lead atom and broadband emission in 2D lead bromide perovskites.
Tin
oxide (SnO2) is the most commonly used electron
transport material for perovskite solar cells (PSCs). Various techniques
have been applied to deposit tin dioxide, including spin-coating,
chemical bath deposition, and magnetron sputtering. Among them, magnetron
sputtering is one of the most mature industrial deposition techniques.
However, PSCs based on magnetron-sputtered tin oxide (sp-SnO2) have a lower open-circuit voltage (V
oc) and power conversion efficiency (PCE) than those prepared by the
mainstream solution method. This is mainly due to the oxygen-related
defects at the sp-SnO2/perovskite interface, and traditional
passivation strategies usually have little effect on them. Herein,
we successfully isolate the oxygen adsorption (Oads) defects
located on the surface of sp-SnO2 from the perovskite layer
using a PCBM double-electron transport layer. This isolation strategy
effectively suppresses the Shockley-Read-Hall recombination at the
sp-SnO2/perovskite interface, which results in an increase
in the V
oc from 0.93 to 1.15 V and an
increase in PCE from 16.66 to 21.65%. To our knowledge, this is the
highest PCE achieved using a magnetron-sputtered charge transport
layer to date. The unencapsulated devices maintain 92% of their initial
PCE after storage in air with a relative humidity of 30–50%
after 750 h. We further use the solar cell capacitance simulator (1D-SCAPS)
to confirm the effectiveness of the isolation strategy. This work
highlights the application prospect of magnetron sputtering in the
field of perovskite solar cells and provides a simple yet effective
way to tackle the interfacial defect issue.
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