A two~band ~pherical model is use.d to represent the conduction electrons of the nonmagnetic transition ~etals wIth an mco~'plete d shell. It ~s shown. by comparison with experimental results that phonon-induced mterband s-d transItions are the major contrIbutor to the electrical and thermal resistivities p and W at all but the lowest temperatures. Consequently, the momentum gap between the sand d bands is an important ?arameter of the the0I?' and may be used to classify t~e.behavior of p and W. At the lowest temperatures it ~s ~ound that the experImental data for p of all the transItIOn metals studied may be consistently interpreted if It IS assumed that electron-electron scattering processes are important.
Using a two-band model for the conduction electrons of the transition metals and assuming that only the lighter carriers contribute to charge transport, the effects of phonon-induced and electron-electron interband s-d transitions are investigated. Provided that the total thermopower, not including the phonon-drag contribution, is given by Sr= (1/Wr) g& W&S&, we find that interband electron-electron scattering may manifest itself in the total thermopower at low as well as at high temperatures.At lowest temperatures (near T/0&~=0. 03), depending upon the magnitudes and temperature dependences of electron-electron-and electron-phonon-scattering contributions, a well-defined extremum of the order of 1@V/'K may appear. At high temperatures the total thermopower, weighted as indicated above, may be dominated by electron-electron-scattering effects, and in that event, will exhibit a T2 temperature dependence. The effect of the variation of some of the parameters and the influence of the addition of impurities are discussed and the theoretical total thermopower is compared with available experimental data.
In this paper the s-d exchange interaction between conduction electrons and magnetic ions is exploited as a damping mechanism for ferromagnetic resonance. One of the unique features of resonance in the ferromagnetic metals, as opposed to insulators, is that the rf fields penetrate the metal only within the skin depth. We focus on the effect of the rf electric field on the magnetic system through the conduction electrons. The central idea pursued is that the existence of a skin depth in a metal is evidence of a modified distribution function of the conduction electrons. This shift in the distribution function then perturbs the magnetic system through the s-d interaction. It is argued in this paper that the effect of this perturbation is to give rise to an important damping mechanism for ferromagnetic resonance.
A versatile high performance Frame Transfer and Storage imaging device has been demonstrated using tin oxide gates and Open Pinned Phase (OPP) technology. The device consists of a 512 x 512 imaging array and integral 5 12 x 512 frame buffer. The detector size is 1 8m x 1 8gm, however, pixel size is electronically controllable by detector aggregation in the X and Y directions. The use of tin oxide gates and OPP technology provide a front side illuminated device with high Quantum Efficiency and low leakage. This combination of features yields a mechanically robust high resolution imager, ideally suited for military, scientific, and commercial applications requiring high sensitivity and/or long stare times.
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