In this paper, AlO/Ag/AlO sandwiched thin films were deposited by magnetron sputtering. AlO thin films with embedded Ag nanoparticles (AgNPs) have been fabricated by adopting appropriate experimental parameters. The measurements on the resistive switching behaviors demonstrated that the embedded AgNPs could substantially enhance the local electric field, and effectively reduce the switching voltages, resulting in a sharply increased OFF/ON ratio up to 10 at 0.5 V. Furthermore, the cycling stability was considerably improved owing to the reduced randomness for the formation and rupture of conductive filaments (CFs). AgNPs could also contribute with movable Ag ions, and the Ti top electrode usually reacts with AlO promoting the formation of oxygen vacancies. As a result, a hybrid CF with better high-temperature stability was induced. Comparatively, if the embedded Ag sublayer is smooth, the switching parameters become dispersive owing to the random formation and rupture of CFs, and the switching performance is deteriorated. A physical model was proposed to understand the effect of the embedded AgNPs.
Lithium metal has been considered as the most promising anode material due to its distinguished specific capacity of 3860 mAh g–1 and the lowest reduction potential of ‐3.04 V versus the Standard Hydrogen Electrode. However, the practicalization of Li‐metal batteries (LMBs) is still challenged by the dendritic growth of Li during cycling, which is governed by the surface properties of the electrodepositing substrate. Herein, a surface modification with indium oxide on the copper current collector via magnetron sputtering, which can be spontaneously lithiated to form a composite of lithium indium oxide and Li‐In alloy, is proposed. Thus, the growth of Li dendrites is effectively suppressed via regulating the inner Helmholtz plane modified with LiInO2 to foster the desolvation of Li‐ion and induce the nucleation of Li‐metal in two‐dimensions through electro‐crystallization with Li‐In alloy. Using the In2O3 modification, the Li‐metal anode exhibits outstanding cyclic stability, and LMBs with lithium cobalt oxide cathode present excellent capacity retention (above 80% over 600 cycles). Enlightening, the scalable magnetron sputtering method reported here paves a novel way to accelerate the practical application of the Li anode in LMBs to pursue higher energy density.
In this paper, ruthenium (Ru) doped InGaZnO (IGZO:Ru) thin films were deposited by magnetron co-sputtering and the resistive switching behaviors were investigated.
Device reliability is of great significance to resistive switching applications, and reset failure dominates the deterioration of cycling endurance. Although it has been found that the excessive aggregation of movable ions could lead to the reset failure, the quantitative studies on the defect movement have seldom been conducted. Hence, the Ni/Al2O3/p+Si sandwiched structure is fabricated by magnetron sputtering, and the reset failure phenomenon is analyzed. The measurements on the resistive switching behaviors demonstrate that the space-charge-limited current mechanism is responsible for the electroforming process, while the current conduction in subsequent switching cycles obeys the hopping mechanism. Temperature-dependent I-V measurements reveal that the resistance states are closely related with both the hopping distance (R) and hopping energy barrier (W) between adjacent localized states. Short hopping distance of 0.66 ± 0.02 nm and low hopping activation energy of 1.72 ± 0.06 meV will lead to the unrecoverable breakdown of Al2O3 dielectric layer, large leakage current, and deteriorative memory window. 1.9 at. % ZnO doped into Al2O3 dielectric layer can lower the switching voltages and the compliance current of the devices, which will alleviate the aggregation of the localized states during the cycling process. As a result, the R and W values in high resistance state are stabilized at 2.24 ± 0.04 nm and 5.76 ± 0.11 meV during 100 direct current switching cycles, and the memory window is significantly improved. A physical model is proposed to understand the reset failure mechanism of Ni/Al2O3/p+Si devices.
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