To construct large-scale silicon electro-optical switches for optical interconnections, we developed a method using a limited number of power monitors inserted at certain positions to detect and determine the optimum operating points of all switch units to eliminate non-uniform effects arising from fabrication errors. We also introduced an optical phase bias to one phase-shifter arm of a Mach–Zehnder interferometer (MZI)-type switch unit to balance the two operation statuses of a silicon electro-optical switch during push–pull operation. With these methods, a 32 × 32 MZI-based silicon electro-optical switch was successfully fabricated with 180-nm complementary metal–oxide–semiconductor (CMOS) process technology, which is the largest scale silicon electro-optical switch to the best of our knowledge. At a wavelength of 1520 nm, the on-chip insertion losses were 12.9 to 16.5 dB, and the crosstalk ranged from −17.9 to −24.8 dB when all units were set to the ‘Cross’ status. The losses were 14.4 to 18.5 dB, and the crosstalk ranged from −15.1 to −19.0 dB when all units were in the ‘Bar’ status. The total power consumptions of the 32 × 32 switch were 247.4 and 542.3 mW when all units were set to the ‘Cross’ and ‘Bar’ statuses, respectively.
A silicon arrayed waveguide grating (AWG) with low channel crosstalk was demonstrated by using ultra-short parabolic tapers to connect the AWG's free propagation regions and single-mode waveguides. The tapers satisfied the requirements of low-loss mode conversion and lower channel crosstalk from the coupling of neighboring waveguides in the AWGs. In this work, three different tapers, including parabolic tapers, linear tapers, and exponential tapers, were theoretically analyzed and experimentally investigated for a comparison of their effects when implemented in AWGs. The experimental results showed that the AWG with parabolic tapers had a crosstalk improvement up to 7.1 dB compared with the others. Based on the advantages of parabolic tapers, a 400-GHz 8 × 8 cyclic AWG with 2.4 dB on-chip loss and -17.6~-25.1 dB crosstalk was fabricated using a simple one-step etching process. Its performance was comparable with that of existing AWGs with bi-level tapers, which require complicated two-step etching fabrication processes.
We experimentally demonstrate two types of programmable, low-threshold, optically controlled nonlinear activation functions, which are challenging to realize in photonic neural networks (PNNs). These devices rely on on-chip integrated Ge–Si photoelectric detectors and silicon electro-optical switches, and they generate rectified linear unit (ReLU) or sigmoid functions with arbitrary slopes without additional electrical processing. Both devices function at an extremely low threshold of 0.2 mW. The embedding of these nonlinear activation functions into convolutional neural networks facilitates the attainment of high inference accuracies of up to 95% when applied to Modified National Institute of Standards and Technology (MNIST) handwritten digit-classification tasks. The devices are suitable for low-power PNNs with an arbitrary number of propagation layers in photonic-computing chips.
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