The effects of crystal originated particles (COPs) on the ultra
thin gate oxide for recent ultra large-scale integration (ULSI)
devices have been studied. Various types of Czochralski (CZ) silicon
wafers were prepared by control the pulling speed of silicon ingot to
clarify the relationships between COPs and breakdown characteristics
of the ultra thin gate oxide. The distribution of COPs, measured by
optical shallow defect analyzer and particle counter, was compared
with the results of time zero dielectric breakdown (TZDB), time
dependent dielectric breakdown (TDDB) and stress induced leakage
current (SILC) for gate oxides with the thickness of 4.5–10 nm. As a
result, it was found that the effect of COPs is not a major factor for
the degradation of ultra thin gate oxide in recent ULSI devices.
The denudation scheme based on vacancy-assisted BMD [Bulk Micro Defect] formation for reducing grown-in defects and the method of reducing STI-stress caused by denudation thermal budget was investigated to improve the retention time of high density DRAM with STI[Shallow Trench Isolation]. In this paper, we report the denudation scheme employing low-cost FPFCIFast-Pull and Fast-Cool] ingot growing, combined with proper arrangement of subsequent thermal budget, resulting in excellent improvement of DRAM retention time.
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