ZnSe which show a potential application in electronic devices such as photovoltaic devices, light emitting devices and photodetector have been synthesized through a hydrothermal method using ZnCl2 and Se powder as the source. In a typical synthesis, Zn2+ and Se2- ion have been prepared separately and charged into a Teflon-lined stainless steel autoclave. The hydrothermal reaction was conducted at 180 °C for 32 hours. Structural properties of ZnSe are studied by X-ray diffraction (XRD) while the optical properties of ZnSe compound are characterized through ultraviolet–visible spectroscopy (UV-Vis). From the XRD result, pure ZnSe with main XRD peak at 2θ = 27.29°, 45.30°, 53.62°, 65.88°, 72.68° has been observed. The result have been supported by the optical results where absoprtion peak at 460 nm with optical band gap energy (Eg) at 2.5 eV.
Quaternary chalcogenide semiconductor has attracted much attention as absorber-layer materials in solar cells. The absorber-layer material, Cu2ZnSnSe4 (CZTSe) which is a p-type semiconductor that has high absorption coefficient, had been synthesized by using solvothermal method. The variation of concentrations of the Copper (II) Chloride dihydrate have brought some effects towards producing the stoichiometry and non-stoichiometry copper zinc tin selenide that may lead to the improvement of efficiency of solar cells. The synthesized reaction was conducted at 250°C for 24 hours. Properties of the samples have been characterized by X-ray diffraction (XRD) to determine the crystal structure of the sample and X-ray Fluorescence (XRF) to determine the elemental composition of the sample. The electrical properties such as resistance and conductivity have been studied through Van der Pauw configuration. The CZTSe has been successfully synthesized at concentrations of 0.15 M with no impurities phases existed.
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