The elastic moduli of semiconductors at finite temperatures have been studied using the statistical moment method. The Young, bulk and shear moduli of the semiconductor with point defects like Si crystal are calculated as a function of the temperature. We discuss the temperature dependence of the elastic moduli of Si crystal with defects and compare the calculated elastic moduli with the experimental results.
The high-pressure melting curve of semiconductors with defects has been studied using statistical moment method (SMM). In agreement with experiments and with DFT calculations we obtain a negative slope for the high-pressure melting curve. We have derived a new equation for the melting curve of the defect semiconductors. The melting was investigated at different high pressures, and the SMM calculated melting temperature of Si, AlP, AlAs and GaP crystals with defects being in good agreement with previous experiments.
Thermodynamic properties of diamond cubic and zinc-blende semiconductors with point defects are considered by the statistical moment method (SMM). The thermal expansion coefficient, the specific heats at constant volume and those at constant pressure, C<sub>V</sub> and C<sub>P</sub>, and the isothermal compressibility are derived analytically for semiconductors with defects. The SMM calculated thermodynamic quantities of the Si, and GaAs semiconductors with defects are in good agreement with the experimental results
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