Hierarchical structures of self-assembled three-dimensional (3D) WO 3 eAg were synthesized via hydrothermal growth using precursor solutions of peroxopolytungstic acid with different amounts of Ag. The as-grown samples were analyzed by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), thermogravimetric analysis (TGA), Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy, ultravioletevisible spectroscopy, and X-ray photoelectron spectroscopy. The XRD and Raman studies showed that as the amount of Ag was varied from 0 to 10 wt% in the hydrothermal growth solution, the crystal phase gradually changed from orthorhombic WO 3 $0.33H 2 O to hexagonal WO 3. The FTIR and TGA studies revealed different hydration levels, supporting the XRD and Raman results. By controlling the amount of Ag in the precursor solution, platelet-like building blocks and hexagonal building blocks were obtained, highlighting the role of Ag in the hydrothermal growth of 3D WO 3 $0.33H 2 O and WO 3 microcrystals. In addition, high-magnification FESEM images showed that the Ag nanoparticles were anchored on the surface of the 3D hierarchical WO 3 eAg structures, and the UVevis measurements demonstrated that the 3D hierarchical structures gradually absorbed more light when the Ag content was increased. Moreover, the band-gap energy decreased when the Ag content was increased from 0 wt% (E g ¼ 2.65 eV) to 10 wt% (E g ¼ 2.26 eV). These experimental results demonstrate that the amount of Ag played a crucial role in determining the building blocks' morphology, and the hydration level, optical properties, and crystal phase of the WO 3 $nH 2 O microcrystals.
Deposition conditions that provided low absorption related to both band tail and deep localized states have been found for both materials Ge:H and Si1YGeY:H. Phosphorous incorporation on Si0.01Ge0.99:H films and boron incorporation on Ge:H films were deposited by low frequency plasma-enhanced chemical vapour deposition (LF PECVD). The phosphorous incorporation in solidphase was observed to preferential with the increase of the doping in the gas phase to 2.5 %, and 2.5% to 4% was observed preferential Si0.01Ge0.99 film, boron incorporation in solid phase increase linearly with the increase of the doping gas phase. The content of solid phase was characterized by Secondary ion mass spectrometry (SIMS) profiling. Hydrogen concentration in the films was determined from Fourier transform infrared spectroscopy (FTIR) and SIMS measurements. Optical measurements provided optical gap, localized states, and band tail. A significant reduction of both band tail and deep localized states were observed at boron incorporation in solid phase = 0.004% on Ge:H films and the same were observed at phosphorous incorporation in solid phase = 0.29% on Si0.01Ge0.99:H films.
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