Epitaxial layers of ZnSiN 2 , ZnGe 0.65 Si 0.35 N 2 , and ZnGe 0.31 Si 0.69 N 2 grown on Al 2 O 3 substrates were implanted at 350°C with high doses (5ϫ10 16 cm Ϫ2 ) of Mn ϩ ions and annealed at 700°C. The implanted region did not appear to become amorphous and showed strong selected area diffraction patterns. Hysteresis was observed in magnetization versus field curves from all of the implanted samples. Differences in field-cooled and zero field-cooled magnetization persisted to temperatures of ϳ200 K for ZnSiN 2 , and ϳ280 K for both ZnGe 0.31 Si 0.69 N 2 and ZnGe 0.69 Si 0.31 N 2 . The results are consistent with recent magnetic data from (Zn x Mn 1Ϫx )GeP 2 , ZnSnAs 2 and (Cd x Mn 1Ϫx )GeP 2 and suggest that this class of materials may be promising for dilute magnetic semiconductor applications.
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