Room-temperature near-band-edge photoluminescence of ZnO is composed of contributions from free-exciton recombination and its longitudinal-optical phonon replica. By tracking the photoluminescence of ZnO nanowires from 4K up to room temperature, the authors show that the relative contributions of these emission lines show a strong variation for samples grown under different conditions. The varying coupling strengths of the excitons and phonons thus lead to a significant shift of the energy position of the room-temperature photoluminescence. They verify that this is not caused by laser heating or stress/strain but is most probably related to crystalline imperfections in the surface region.

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We report on low temperature photoluminescence studies of ZnO nanowires embedded in different polymers. Comparing the spectra of as-grown and embedded ZnO nanowires, we find a decrease of the deep-level emission and an increase of the near band-edge emission after the embedding process. The near band-edge emission of the embedded ZnO nanowires is dominated by a surface exciton band. The observed effects are independent of the selected polymer. The decrease of the deep-level emission scales with the balling abilities of the different polymers. We propose a model to explain the spectral changes.

Single crystal ZnO wurtzite nanowires grown along the c-axis with diameters down to 4 nm were synthesized by a catalytic vapor transport technique. Photoluminescence spectra of these wires indicate a blue shift of the free exciton by 19 meV due to confinement. This result was obtained by analyzing the line shape of the blue-shifted LO phonon replica of the free exciton. In addition, a surface-related excitonic luminescence feature centered at 3.366 eV was observed with a strongly elevated thermal activation energy.

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