Extraordinary infrared photoluminescence efficiency was found for Er 2 SiO 5 film by optimizing the composition of Yb additions on SiO 2 / Si substrates. Above two orders of magnitude enhanced 1.53 m Er 3+ photoluminescence for the Er 0.1 Yb 1.9 SiO 5 film on SiO 2 / Si substrate was obtained by pumping at 980 nm compared with pure Er 2 SiO 5 film on Si substrate at 654 nm. All Er ions for Er 0.1 Yb 1.9 SiO 5 film are optically active. The decreased nonradiative transient rate leads to extraordinary photoluminescence efficiency in the Er 0.1 Yb 1.9 SiO 5 film. It indicated that the Er 0.1 Yb 1.9 SiO 5 film is the sought candidate material for compact waveguide amplifiers and emitters in silicon photonics integration.
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