This paper preenta a simulator for the statistical analysis of MOS integrated circuita affected hy mismatch effect. The tool is based on a rigorous formulation of circuit equations including random current murces to take into account technological toleran-. The simulator requires a simulation time of several orders of magnitude lower than that required by Montecarlo analysis, while ensuring a good accuracy.
K e y w O r d sDevice mismatch, stochastic simulation, MNA, MOS ICs, nonMontecarlo analysis.
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