Reactive sintering of elemental powders was used to form Y-doped Mg2Si (Y: 1000, 2000, 3000ppm) using a field-activated pressure assisted synthesis (FAPAS) method. XRD analysis, and the calculation of lattice constant (a) indicates that 1000ppm is the solid solubility of Y in Mg2Si. Sample doped with 2000ppm Y owns better performances, the absolute value of Seebeck Coefficient increases in the temperature of 288-580K and is higher than that of non-doped Mg2Si, and it got higher electric conductivity and higher power factor, which reaches up to 1.67 times of non-doped Mg2Si at 438K and 2.03 times of that of non-doped Mg2Si at about 408K. Meanwhile, the introduction of Y can decrease thermo-conductivity obviously, proving that the introduction of Y is favorable for both electrical and thermal properties.

Iron disilicide（-FeSi2）compounds were synthesized by field-activated pressure assisted synthesis (FAPAS) process, and their thermoelectric properties were measured. Fine microstructure with small pores was obtained in the fabricated samples. The average grain size was approximately 0.3 m. The thermal conductivity in the temperature range of 300-725 K was 3-4 Wm-1K-1, which was considerably lower than that of the same materials synthesized by other methods including SPS process. Lower thermal conductivity provided a higher figure of merit, ZT of 28.50×10-4 in the temperature range of 330-450 K.

Iron disilicide (-FeSi2, and -FeSi2+Cu0.1wt%) were prepared by a field-activated pressure assisted synthesis(FAPAS) method from elemental powders and the thermoelectric properties were investigated. The average grain size of these products is about 0.3m. The thermal conductivity of these materials is 3-4wm-1K-1in the temperature range 300-725K. These products’ figure of merit is 28.50×10-4 in the temperature range 330-450K. The additions of Cu promote the phase transformation of -Fe2Si5 + -FeSi → β-FeSi2 and shorten the annealing time. It is proved that FAPAS is a benign and rapid process for sintering of -FeSi2 thermoelectric materials.