Electroresistance (ER) effects and current-induced metastable states in the thin film of Pr0.5Sr0.5MnO3 were investigated. The initial state was insensitive to weak currents and susceptible to high-density currents. As the current density reached a certain value, metastable states, which were very sensitive to weak currents at low temperatures, were excited. It was found that as the excited current increased, the induced metastable state showed a larger electroresistance in a wider temperature range. Interfacial effects related to electrodes could be ruled out. The observed effects might be related to the coexistence and instability of the multiphases in manganites.
We have studied the electrically tunable strain effects on phase-separated Pr0.5Sr0.5MnO3 films epitaxially grown on ferroelectric 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 (001) substrates. Upon cooling, the film shows a ferromagnetic metal to antiferromagnetic insulator (FMM-AFI) transition at low temperature. Such a transition is depressed and finally disappears in electrical properties with increasing electric field applied on the substrate. Under an electric field of 6 kV/cm, a large reversible resistance drop (∼85%) as well as an enhancement of magnetization is achieved. In situ X-ray diffraction indicates that the substrate-induced strain plays a crucial role in determining the properties in the film by tuning the phase competition between the ferromagnetic metallic and antiferromagnetic insulating state. The FMM-AFI transition in the film is demonstrated to be originated from a large biaxial strain. With decreasing strain, the FMM state is enhanced, leading to a colossal elastoresistance.
Pr0.5Sr0.5MnO3 films were grown on ferroelectric substrates of 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 by pulsed-laser deposition method. The film structure and lattice change with electric field applied on the substrate are examined by X-ray diffraction. The electric field dependence of resistivity was compared with electric field dependence of lattice at room temperature, revealing a relation between resistance and strain. Current-induced electroresistance (CER) was studied by using different measuring current. With increasing electric filed a colossal decrease of CER at low temperature was achieved, indicating great strain effect. The piezoelectric strain effect on the magnetoelectric coupling at multiferroic interface was discussed.
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