Indium tin oxide (ITO) films are widely used as transparent conducting electrodes in solar cells, gas sensors, and car windows because of their high electrical conductivity and good optical transparency in the visible region. In this work, ITO thin films were prepared by cathodic radio-frequency (RF) sputtering using an ITO target with 90% In2O3 and 10% SnO2. The structural properties were studied by X-ray diffraction (XRD), scanning electronic microscopy (SEM), and X-ray reflectometry (XRR). Electrical measurements were performed by applying the four-point method and studying the Hall Effect. Finally, optical properties were taken by the UV-Vis-NIR spectrophotometry. The effect of the RF power and deposition time on optical and electrical properties was investigated. It is shown that by using a RF power of 110–80 W, one can prepare crystalline samples with low resistivity, which is an aimed property for TCO semiconductors. Electrical measurements revealed that the resistivity decreases by increasing the RF power and/or the deposition time.
In this paper, n-Zinc oxide=p-copper oxide heterojunctions were fabricated by RF-sputtering on indium tin oxide-covered glass substrates. The structural and optical properties of the copper oxide and zinc oxide films were analyzed by X-ray diffraction, Fourier transform infrared, scanning electronic microscopy and ultraviolet-visible spectroscopy. The electrical junction properties were investigated by current-voltage (I-V) characteristics. Additionally, both capacitance (C) and conductance (G) versus frequency ( f ) measurements were realized at room temperature. The junctions showed a rectifying behavior, and C and G varied with both voltage and frequency.
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