We present a model describing the temperature dependence of the resistivity of the
Al92Sm8
system during formation of fcc-Al nanocrystals. We take into consideration changes in
resistivity of the amorphous phase due to the changing content of Al, the varying
density of the crystallization nuclei, the creation of the Sm layer on the grain
surface and decomposition appearing during annealing of the amorphous phase.
Our calculations exhibit a better agreement with experimental electrical resistivity data for
the nanocrystallization model considering previous decomposition of amorphous structure
and formation of a monatomic Sm layer on grain boundaries than for a model of
nanocrystallization on quenched-in nuclei with growth controlled by diffusion with a
diffusion field impingement.
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