Spin-based electronics has evolved into a major field of research that broadly encompasses different classes of materials, magnetic systems, and devices. This review describes recent advances in spintronics that have the potential to impact key areas of information technology and microelectronics. We identify four main axes of research: nonvolatile memories, magnetic sensors, microwave devices, and beyond-CMOS logic. We discuss state-of-the-art developments in these areas as well as opportunities and challenges that will have to be met, both at the device and system level, in order to integrate novel spintronic functionalities and materials in mainstream microelectronic platforms.Conventional information processing and communication devices work by controlling the flow of electric charges in integrated circuits. Such circuits are based on nonmagnetic semiconductors, in Technologies based on GMR and MTJ devices are now firmly established and compatible with CMOS fab processes. Yet, in order to meet the increasing demand for high-speed, high-density, and low power electronic components, the design of materials, processes, and spintronic circuits needs to be continuously innovated. Further, recent breakthroughs in basic research brought forward novel phenomena that allow for the generation and interconversion of charge, spin, heat, and optical signals.Many of these phenomena are based on non-equilibrium spin-orbit interaction effects, such as the spin Hall and Rashba-Edelstein effects 6,8,23 or their thermal 24 and optical 25,26 analogues. Spin-orbit torques (SOT), for example, can excite any type of magnetic materials, ranging from metals to semiconductors and insulators, in both ferromagnetic and antiferromagnetic configurations 6 . This versatility allows for the switching of single layer ferromagnets, ferrimagnets, and antiferromagnets, as well as for the excitation of spin waves and auto-oscillations in both planar and vertical device geometries 10,11 . Charge-spin conversion effects open novel pathways for information processing using Boolean logic, as well as promising avenues for implementing unconventional neuromorphic 27,28,29 and probabilistic 30 computing schemes. Finally, spintronic devices cover a broad bandwidth ranging from DC to THz 31,32 , leading to exciting opportunities for the on-chip generation and detection of high frequency signals.

We present the results of a study of the magnetic properties of an array of 34-nm thick Co(100) epitaxial ring magnets, with inner and outer diameters of d(in) = 1.3 microm and d(out) = 1.6 microm, respectively. Magnetic measurements and micromagnetic simulations show that a two step switching process occurs at high fields, indicating the existence of two different stable states. In addition to the vortex state, which occurs at intermediate fields, we have identified a new bi-domain state, which we term the onion state, corresponding to opposite circulation of the magnetization in each half of the ring. The onion state is stable at remanence and undergoes a simple and well characterized nucleation free switching.

The high-symmetry ring geometry is shown to exhibit a wide range of intriguing magnetostatic and magnetodynamic properties, which we survey in this topical review. We consider first the patterning and deposition techniques, which are used to fabricate ring structures (diameters between 0.1 and 2 µm) and discuss their respective advantages and disadvantages. The results of direct nanoscale imaging of the novel magnetization configurations present in rings with different geometrical parameters (including discs) are discussed. These results give valuable insight into the influence of the magnetic anisotropies governing the magnetic states. The different types of domain walls that arise are compared quantitatively to micromagnetic simulations. The magnetodynamic switching between the different magnetic states is described in detail. In particular we elaborate on the different geometry-dependent magnetic switchings, since the different transitions occurring allow us to determine which energy terms govern the reversal process. We discuss a process by which fast (sub-ns) and controlled switching can be achieved, therefore making rings an attractive geometry for applications, in addition to studying fundamental issues of nanomagnetism.

The spin configuration in a magnet is in general a "natural" consequence of both the intrinsic properties of the material and the sample dimensions. We demonstrate that this limitation can be overcome in a homogeneous ferromagnetic film by engineering an anisotropy contrast. Substrates with laterally modulated single-crystal and polycrystalline surface regions were used to induce selective epitaxial growth of a ferromagnetic Ni film. The resulting spatially varying magnetic anisotropy leads to regular perpendicular and in-plane magnetic domains, separated by a new type of magnetic wall---the "anisotropy constrained" magnetic wall.

No abstract

The methodology for adapting a standard micromagnetic code to run on graphics processing units (GPUs) and exploit the potential for parallel calculations of this platform is discussed. GPMagnet, a general purpose finite-difference GPU-based micromagnetic tool, is used as an example. Speed-up factors of two orders of magnitude can be achieved with GPMagnet with respect to a serial code. This allows for running extensive simulations, nearly inaccessible with a standard micromagnetic solver, at reasonable computational times.

We have carried out a detailed study of the magnetic switching in square lattice cobalt antidot arrays with periods ranging from 2 m down to 200 nm ͑antidot size= antidot separation͒. Magneto-optical Kerr effect measurements show first a small change in the magnetization due to a reversible rotation of the magnetic spins in the antidot rows, followed by a large change due to reversal of the antidot array columns parallel to the applied field. Employing x-ray photoemission electron microscopy and transmission x-ray microscopy, the latter irreversible process was observed as a nucleation and propagation of discrete domain chains. The propagating chain ends are blocked by perpendicular chains present in the antidot rows via various mechanisms revealed by micromagnetic simulations.

We present a simple method to control the direction of the circulation of the magnetization in mesoscopic ring magnets, using a uniform magnetic field only. The method is based on the nucleation free switching which occurs when the rings switch from the near-saturated state, referred to as the “onion state,” to the flux-closed vortex state. Two possible onion states, forward or reverse magnetized, are possible for a given direction of the magnetic field. Going from the forward or the backward onion state, both local scanning Kerr microscopy measurements and micromagnetic simulations show that the clockwise or the counterclockwise vortex state, respectively, can be selected due to asymmetric pinning of the two domain walls that are present in the onion state.