He + -ion irradiation was applied for electrical isolation of p-In0.49Ga0.51P in InGaP/GaAs/InGaAs structures. Sheet resistance of approximately 1×106 Ω/□ was achieved with doses above 1×1013 cm−2 at 100 keV. Thermal stability of isolation was maintained for annealing temperatures up to 500 °C. Photoluminescence results show that InGaP transparency to InGaAs/GaAs quantum-well emission is closely related to sheet resistance changes in the irradiated structure.
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